http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107919359-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11517 |
| filingDate | 2016-10-09^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107919359-B |
| titleOfInvention | A semiconductor device and its manufacturing method and electronic device |
| abstract | The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device, and relates to the technical field of semiconductors. The method includes: providing a semiconductor substrate, forming a first floating gate material layer on the surface of the semiconductor substrate; forming a plurality of shallow trench isolation structures in the semiconductor substrate, and forming a plurality of shallow trench isolation structures in the semiconductor substrate A structure-isolated first floating gate, wherein the top surface of the shallow trench isolation structure is higher than the top surface of the semiconductor substrate and is flush with the top surface of the first floating gate; the shallow trench isolation structure, so that the top surface of the remaining shallow trench isolation structure is lower than the top surface of the first floating gate and higher than the top surface of the semiconductor substrate; A second floating gate is formed on the exposed surface of the gate, and the second floating gate further extends to a part of the surface of the shallow trench isolation structure, thereby forming a mushroom-shaped floating gate, wherein the width of the top of the mushroom-shaped floating gate greater than the width of its bottom. |
| priorityDate | 2016-10-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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