http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108123035-A

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filingDate 2015-12-24^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb1bef38e3593e6d35652e002637a577
publicationDate 2018-06-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108123035-A
titleOfInvention phase change memory
abstract The invention discloses a phase change memory. The phase change memory includes an active element, a lower electrode, a barrier, a heater, a first insulating layer, an upper electrode and a ring-shaped phase change layer. The lower electrode is coupled to the active element, the barrier is located above the lower electrode, and the heater is embedded in the barrier. The first insulating layer covers the heater and the barrier, and the upper electrode is located above the first insulating layer. The annular phase change layer surrounds the first insulating layer and the upper electrode, and the annular phase change layer contacts at least one side of the heater. Since the contact area between the heater and the annular phase change layer is small, the reset current of the phase change memory is very low.
priorityDate 2015-12-24^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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