| abstract |
The present invention provides a power semiconductor device with high heat resistance and reliability, preventing the occurrence of cracks in the silicone gel during temperature cycling and high-temperature storage of the power semiconductor device. It includes: an insulating substrate 2 having a metal layer 22 formed on its upper surface; a semiconductor element 3 and a main electrode 5 bonded to the upper surface of the metal layer 22; a metal wiring 4 connecting the metal layer 22 and the semiconductor element 3; and Metal member 1 joined to the lower surface side of insulating substrate 2; case member 6 surrounding insulating substrate 2 and in contact with the surface of metal member 1 to which insulating substrate 2 is joined; sealing resin 8 filled with In the area surrounded by the metal member 1 and the case member 6, the resin strength at room temperature is 0.12MPa or more, the microcrystallization temperature is −55°C or less, and the penetration after 1000 hours of storage at 175°C is 30 to 50. Next, the insulating substrate 2, the metal layer 22, the semiconductor element 3, the metal wiring 4, and the main electrode 5 are sealed. |