| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20 |
| filingDate |
2016-10-11^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-04-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108463581-B |
| titleOfInvention |
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device |
| abstract |
A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The ratio of the standard deviation of the carrier concentration of the silicon carbide layer to the average value of the carrier concentration of the silicon carbide layer in a direction parallel to the central region is less than 5%. The average value of the carrier concentration is 1×10 14 cm -3 or more and 5×10 16 cm -3 or less. In a direction parallel to the central region, the ratio of the standard deviation of the thickness of the silicon carbide layer to the average value of the thickness of the silicon carbide layer is less than 5%. The central region has an arithmetic mean roughness (Sa) of 1 nm or less. The central region has a haze of 50 or less. |
| priorityDate |
2016-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |