| abstract |
The application discloses a 3D storage device and a manufacturing method thereof. The 3D memory device includes: a substrate; a stacked structure located above the substrate, the stacked structure including multiple gate conductors and multiple interlayer insulating layers stacked alternately; multiple channel pillars running through the stacked structure; and The conductive channel runs through the stacked structure, and the conductive channel is connected to the bottom ends of the plurality of channel columns through the substrate, wherein the upper part of the conductive channel includes the conductive column, and the lower part includes the insulating core and the conductive layer surrounding the insulating core. By making the insulating core at the lower part of the conductive channel and adjusting the ratio of the insulating core to the conductive column occupying the conductive channel, the purpose of adjusting the warpage of the wafer from positive to negative can be achieved. |