http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109234805-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2018-11-02^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109234805-B |
| titleOfInvention | Growth method of high-purity silicon carbide single crystal |
| abstract | The application relates to a growth method of a high-purity silicon carbide single crystal, which comprises the steps of placing raw materials in a silicon carbide single crystal growth device, heating the raw materials to sublimate the raw materials to form the silicon carbide single crystal, wherein a Si element supplement device containing Si powder is arranged in the crystal growth device, and the Si element supplement device is arranged in the raw materials; in the crystal growth process, Si powder can pass through the Si element supplementing device to supplement Si elements for the growth of the silicon carbide single crystal. The silicon source can be supplemented into the silicon carbide single crystal growth device in a specific time, and the Si/C ratio of the whole system is adjusted, so that the SiC crystal can be prepared better. |
| priorityDate | 2018-11-02^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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