http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109319726-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R2201-003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R31-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R17-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00349 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-0038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-1051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
| filingDate | 2018-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2023-01-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2023-01-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109319726-B |
| titleOfInvention | Piezoelectric microphone with deflection control and manufacturing method thereof |
| abstract | The present invention relates to a piezoelectric microphone with deflection control and a method of manufacturing the same. It provides a method and resulting device for forming a piezoelectric microphone with interlock/stops and micro-bumps. Several specific embodiments include: forming a diaphragm above the silicon substrate having first and second sacrificial layers disposed on opposite sides thereof, the diaphragm is formed on the first sacrificial layer, forming a first HM above the diaphragm, forming first and second via holes through the first HM, forming a first pad layer in the first and the second via holes and over an exposed upper film, forming a trench to the first and second via holes In the first sacrificial layer between the second vias and in the gap between the trench and the second via, patterned above the diaphragm, in the first and second vias, the trench and A second HM in the gap, and forming a second pad layer above the second HM and in exposed areas around the first and second vias to form pad structures. |
| priorityDate | 2017-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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