http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109390347-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1157 |
| filingDate | 2018-10-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109390347-B |
| titleOfInvention | A method for forming a three-dimensional memory device and a three-dimensional memory device |
| abstract | Embodiments of the present invention disclose a method for forming a three-dimensional storage device and a three-dimensional storage device, wherein the method includes: filling a lower channel hole with polysilicon along an upper surface of an underlying layer of the three-dimensional storage device, so as to fill the lower via hole with polysilicon. depositing a first polysilicon layer on the upper surface of the layer, and depositing a second polysilicon layer on the lower channel hole; grinding to remove the first polysilicon layer and the lower stack with a preset thickness; depositing a first material layer on the lower stack; depositing on the first material layer to form an upper stack; and etching the upper stack to form upper channel holes corresponding to the lower channel holes. |
| priorityDate | 2018-10-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 24 of 24.