http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109817631-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f3f8b3e51eb4f11a283012e3917b5de |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573 |
| filingDate | 2017-11-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e89a67704e1dbf58adb0b726418338f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad3fa0541c528da1084f3540492895eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4b93cc3847a2f2d27e57393681cef71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd6d02cc9d94c17f6f0f1eb798e08fb1 |
| publicationDate | 2019-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109817631-A |
| titleOfInvention | A kind of new flash memory cell |
| abstract | The present invention provides a kind of new flash memory cells, including silicon substrate, conductor, insulating layer and conducting wire, wherein silicon substrate is divided into P doped region, the first N doped region and the 2nd N doped region；Conductor is divided into the first conductor and the second conductor, and the second conductor is located on the first conductor, and the first conductor is embedded between the first N doped region and the 2nd N doped region, and is surrounded in the upper surface of P doped region, and by insulating layer；Conducting wire is divided into the first, second, and third conducting wire, and the first conducting wire is connected with the first N doped region, and the second conducting wire is connected with the second conductor, and privates is connected with the 2nd N doped region；Since flash memory cell is in the wiping of programming and during write, electronics passes through the scheme of different zones oxide layer respectively, and beneficial effect obtained is the probability for reducing oxide trapped charge generation, improves reliability. |
| priorityDate | 2017-11-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
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