| abstract |
A method of depositing a silicon nitride film on a semiconductor substrate processed in a microvolume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber, wherein a single semiconductor substrate is supported on a ceramic surface of a susceptor and a process gas Introduced into the reaction zone above the semiconductor substrate through gas outlets in the ceramic surface of the showerhead, the method comprising: (a) cleaning the susceptor and the ceramic surface of the showerhead with a fluorine plasma, (b) ) depositing a halide-free atomic layer deposition (ALD) oxide primer on the ceramic surface, (c) depositing an ALD silicon nitride precoat on the halide-free ALD oxide primer layer, and (d) by transferring each semiconductor substrate into the reaction chamber and depositing an ALD silicon nitride film on the semiconductor substrate supported on the ceramic surface of the susceptor Bulk of semiconductor substrates. |