http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110028055-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2202-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2202-22 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-159 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-159 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-775 |
| filingDate | 2019-04-11^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110028055-B |
| titleOfInvention | Method for preparing semiconductor single-walled carbon nanotube based on methylation modification |
| abstract | The invention discloses a method for preparing a semiconductor single-walled carbon nanotube based on methylation modification. The preparation method of the semiconductor single-walled carbon nanotube comprises the following steps: (1) single-walled carbon nanotubes were grown on ST-cut quartz using chemical vapor deposition. (2) Transferring single-walled carbon nanotubes grown in ST-cut quartz to SiO 2 a/Si substrate. (3) Mixing the above SiO 2 the/Si substrate is put into a solution containing di-tert-butyl peroxide and irradiated by an ultraviolet xenon lamp, and finally cleaned by ethanol and dried by nitrogen. The purity of the semiconductor single-walled carbon nanotube prepared by the method is higher than 90%. The innovation of the method is that the metallic single-walled carbon nanotube is not removed, so that the metallic single-walled carbon nanotube can show the semiconductor performance. The method is convenient and rapid, reduces the influence of various negative factors brought by the traditional separation method to a certain extent, and provides a new research direction for the control and preparation of the semiconductive single-walled carbon nanotube. |
| priorityDate | 2019-04-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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