| abstract |
The invention provides a method for preparing a three-dimensional memory, including: providing a semiconductor device, the semiconductor device includes a substrate, a stepped structure, and a flat layer, the stepped structure is provided on the substrate, the stepped structure includes a stepped portion and a storage portion, and the flat layer covers the lining Bottom and step structure. An interlayer dielectric layer is formed on the surface of the flat layer. A plurality of contact holes and a plurality of through holes penetrating through the interlayer dielectric layer and the flat layer are formed, the contact holes correspond to the substrate and/or the stepped portion, and the through holes correspond to the storage portion. Conductive material is provided to form contacts within the contact holes and to form connections within the through holes. The present invention integrates the preparation process of the contact piece and the connecting piece. Therefore, the preparation method provided by the present invention greatly reduces the time and cost for preparing the contact piece and the connecting piece, and also greatly reduces the time for preparing the three-dimensional memory and reduces the production cost of 3D memory. The present invention also provides a three-dimensional memory and an electronic device. |