http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110085734-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q21-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-24 |
| filingDate | 2019-04-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110085734-B |
| titleOfInvention | A slot antenna coupled superconducting transition edge polarization detector array and its fabrication process |
| abstract | The invention discloses a slot antenna coupled superconducting transition edge polarization detector array, which has 64 pixels, 512 welding points are distributed on the upper and lower ends of the array, and each pixel consists of a slot antenna array, two band-pass filters and It consists of two superconducting transition edge sensors, and each superconducting transition edge sensor consists of two kinds of superconducting thin films with different superconducting transition temperatures in series. The invention also provides a preparation process of a slot antenna coupled superconducting transition edge polarization detector array, all of which are fabricated by photolithography technology, a total of twelve photolithography processes, and a SiO 2 /Si 3 N 4 bracket, which effectively avoids the need for Harmful gas pollution and Si 3 N 4 stent damage during deep silicon etching process, the process stability is higher and the performance is better. |
| priorityDate | 2019-04-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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