| abstract |
The present invention relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include: an n-type layer, a p+ type region, a p-type region, a first electrode and a second electrode, the n-type layer is arranged on the first surface of the substrate; the p+ type region is arranged on the substrate on the first surface of the p-type region; the p-type region is disposed on the top surface of the n-type layer; the first electrode is disposed on the p+-type region and the p-type region; the second electrode is disposed on the substrate On the second surface; wherein, the side surface of the p+-type region is in contact with the side surface of the n-type layer, and the thickness of the p+-type region is the same as the thickness of the n-type layer and the thickness of the p-type region. |