http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110537367-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-3745 |
| filingDate | 2018-04-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56cf80d0b411ab8e233cb32944f22608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dd6722e9e43fdb7b901515bc1e1ce8e |
| publicationDate | 2019-12-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110537367-A |
| titleOfInvention | Solid state image capture device and electronics |
| abstract | The present technology relates to a solid-state image capturing device and an electronic device capable of improving the efficiency of charge transfer from a charge accumulation unit to a charge voltage conversion unit via a transfer gate. One aspect of the present technology provides a solid-state image capture device configured such that, before an A/D conversion operation for acquiring a signal level, the switching unit switches to the LG state at least once, and switches to the HG state at least once. Once; when the switching unit has switched to the LG state and when the switching unit has switched to the HG state, the transfer unit transfers the charge accumulated in the charge accumulation unit to the charge/voltage conversion unit at least twice; and the charge/voltage The conversion unit adds charges transferred when the switching unit has switched to the LG state and charges transferred when the switching unit has switched to the HG state, and converts the resulting charges into a voltage signal. For example, the present technology can be applied to CMOS image sensors. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113238189-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113238189-B |
| priorityDate | 2017-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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