http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110627480-A

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filingDate 2019-09-01^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c81aaec0a3aa887c7d394100adb70cde
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publicationDate 2019-12-31^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110627480-A
titleOfInvention Preparation method of MgO-Al2O3-GeO2 ternary system microwave dielectric material
abstract The invention discloses a preparation method of a MgO-Al 2 O 3 -GeO 2 ternary system microwave dielectric material. Using MgO, Al 2 O 3 and GeO 2 with a purity of ≥ 99% as the main raw materials, the molar ratio of MgO:Al 2 O 3 :GeO 2 =3:1:3 was mixed, the materials were wet ball milled for 4h, and dried at 1100 The pre-fired powder was pre-fired for 4 hours in an air atmosphere; the pre-fired powder was subjected to secondary ball milling, and then 5 wt% polyvinyl alcohol was added for granulation. After granulation, it was pressed into a small cylinder with a diameter of 12 mm and a thickness of 6 mm. Debinding at 600°C for 4 hours, followed by cooling in the furnace to obtain a ceramic material, and then sintering the ceramic material at 1250-1350°C for 4 hours to obtain a MgO-Al 2 O 3 -GeO 2 ternary system microwave dielectric material. The method of the invention is simple to operate, and the prepared MgO-Al 2 O 3 -GeO 2 ternary system microwave dielectric material has excellent microwave performance: low dielectric constant ( ε r ), high Q×f value and small τ f It can be used in the manufacture of microwave devices such as resonators, substrates, and filters.
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