http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110872701-B

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filingDate 2019-08-28^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-04-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-04-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-110872701-B
titleOfInvention Substrate processing apparatus and method for manufacturing semiconductor device
abstract The invention provides a substrate processing apparatus and a method for manufacturing a semiconductor device, which can make the quality of the generated film the same between a first processing module and a second processing module when the same film is generated in the first processing module and the second processing module. The substrate processing apparatus includes: a first processing module; a second processing module; a first exhaust box; a second exhaust box; a universal supply tank; a first valve block; and a second valve group configured to perform processes of repeating substantially the same gas supply sequence in parallel with a time shift so as to generate the same film in the first process module and the second process module, wherein the time shift is determined by delaying the gas supply sequence of the other of the first process module and the second process module which starts the processes later so that the supply timing of a specific gas among the plurality of process gases does not overlap with the gas supply sequence of the one of the first process module and the second process module which starts the processes earlier.
priorityDate 2018-09-04^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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