http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110970532-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2018-09-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-10-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110970532-B |
| titleOfInvention | Micro light-emitting diode capable of improving mass transfer yield |
| abstract | The invention covers a first protective layer and a second protective layer on the surface of a micro light-emitting diode to finish the micro light-emitting diode which can improve the yield of mass transfer. In particular, the micro light emitting diode having the first and second protective layers on the surface thereof can exhibit a high tolerance to external stress. Therefore, when a single micro light emitting diode is transferred to a substrate or a plurality of micro light emitting diodes are transferred in a large amount, the surface layer or other areas of the micro light emitting diodes are not deformed, cracked or broken due to the action of external stress. Meanwhile, in order to avoid the influence of the first protective layer and the second protective layer on the normal light emitting of the micro light emitting diode, the invention particularly makes the refractive index of the first protective layer smaller than that of the second semiconductor material layer, and simultaneously makes the refractive index of the second protective layer smaller than that of the first protective layer. |
| priorityDate | 2018-09-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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