http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110998857-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e19fa7edc4f6f4e6dc4ecda25aaaceb1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2019-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcae37a87df5ab151f7a21383d2fd553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f60b10820aeef5eeff520c548e813f49 |
| publicationDate | 2020-04-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110998857-A |
| titleOfInvention | A kind of thin film transistor and its preparation method and thin film transistor array |
| abstract | The invention provides a thin film transistor, a preparation method thereof and a thin film transistor array, comprising: a base layer; a buffer layer on the base layer; a source electrode and a drain electrode separated from each other on the buffer layer; And the metal oxide semiconductor layer on the buffer layer between the source electrode and the drain electrode; the first insulating layer on the source electrode, the drain electrode, the metal oxide semiconductor layer and the buffer layer; wherein, the first insulating layer is composed of organic materials and Composition of metal oxide nanoparticles dispersed in organic material; gate on first insulating layer. The present application uses organic materials and metal oxide nanoparticles dispersed in the organic materials as the first insulating layer to improve the dielectric constant of the first insulating layer while reducing the fabrication cost of thin film transistors; The photosensitive material does not need to be patterned by traditional photoresist and photoresist stripping, which simplifies the manufacturing process of the thin film transistor and reduces the manufacturing cost. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113451414-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112114460-A |
| priorityDate | 2019-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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