http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111066159-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1896 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2018-07-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a68d4999de078d01780e60a976853c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1caf7e05c479833ab3223efc711ef98b |
| publicationDate | 2020-04-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111066159-A |
| titleOfInvention | Optoelectronic semiconductor device with contact structure and method for producing a contact structure for an optoelectronic semiconductor device |
| abstract | A method for producing a contact structure (150) for an optoelectronic semiconductor device (1) is proposed, the method comprising the steps of: a) providing a growth substrate (120) having a growth substrate grown thereon a semiconductor body (10) having a first region (101), a second region (102) and an active region (103); b) creating at least one first recess (170), the first A cutout extends from the second region (102) completely through the active region (103) into the first region (101) and does not penetrate the first region (101) completely; c) conducts the first conductive The contact material is introduced into the first recess ( 170 ); d) the semiconductor body ( 10 ) is fixed on the carrier substrate ( 130 ) with the side facing away from the growth substrate ( 120 ), and the growth substrate ( 120 ) Stripping from the semiconductor body ( 10 ); e) creating at least one second recess ( 180 ), which extends from the first region ( 101 ) as far as the first recess ( 170 ), so that the first recess ( 180 ) is A cutout (170) and a second cutout (180) form a lead-through through the semiconductor body (10); and f) introducing a second conductive contact material into the second cutout (180), The first contact material and the second contact material are caused to form an electrically conductive contact structure through the semiconductor body ( 10 ). Furthermore, an optoelectronic semiconductor device (1) with a contact structure (150) is proposed. |
| priorityDate | 2017-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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