http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111262551-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_478d3f41fe1493412935af4e32cead3c |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H2003-023 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8542 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 |
| filingDate | 2020-04-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3ed7e9aff8726696e48abf2d9a331be |
| publicationDate | 2020-06-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111262551-A |
| titleOfInvention | Air-gap shear wave resonator based on lithium niobate thin film and preparation method thereof |
| abstract | The invention discloses an air-gap shear wave resonator based on a lithium niobate film and a preparation method thereof. Through the optimized design of electrode shape, electrode size, piezoelectric material selection, thickness, etc., the shear wave parasitic mode is reduced. Therefore, the resonator only works in the shear wave mode, which improves the quality factor of the resonator; a protective layer and a sacrificial layer material are deposited on one surface of the double-polished high-resistance silicon wafer successively, and then the substrate is chemically mechanically polished; In the method of ion implantation and wafer bonding, the lithium niobate film is transferred to the polished substrate, and then metal interdigital electrodes are sputtered on the surface of the lithium niobate film by a peeling process; finally, dry etching or wet method is used. The sacrificial layer is removed by etching; then this side is protected, the previous growth is repeated on the other side, and the finished device is obtained after removing the protective layer; thus, the mechanical strength and reliability of the resonator are improved, and it is suitable for large-scale resonators. manufacture. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112689376-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112953449-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112689376-A |
| priorityDate | 2020-04-01^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 28 of 28.