http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111404025-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate | 2020-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111404025-B |
| titleOfInvention | Epitaxial growth method of AlGaAs/AlGaInP mixed material |
| abstract | The invention discloses an epitaxial growth method of an AlGaAs/AlGaInP mixed material, which comprises the following steps: growing AlGaAs material on the surface of the substrate; stopping growth in the process of growing the AlGaAs material on the surface of the substrate to exhaust As atoms in the reaction chamber; and growing the AlGaInP material on the surface of the AlGaAs material after the growth pause is finished. The method provided by the invention can reduce the defects and dislocation at the interface of the mixed material by adjusting the components of each element and utilizing the characteristics of each material. |
| priorityDate | 2020-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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