http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111962152-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f23f04373f26915ff7578e2cada4061 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate | 2020-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b19337f35450039253e853ae1a37276 |
| publicationDate | 2020-11-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-111962152-A |
| titleOfInvention | A kind of preparation method of silicon carbide single crystal with reduced crystal defects |
| abstract | The invention relates to a method for preparing a silicon carbide single crystal with reduced crystal defects, and belongs to the technical field of silicon carbide single crystal preparation. In order to solve the problem that impurities are easily introduced to form defective crystals in the existing silicon carbide crystal preparation process, the present invention provides a silicon carbide single crystal preparation method with reduced crystal defects, which includes bonding a silicon carbide seed crystal column on the crucible cover, so as to reduce the defects of the crystal defects. Silicon carbide polycrystals are used as raw materials to grow silicon carbide single crystals. In the invention, the remaining seed column after cutting the newly generated silicon carbide single crystal can also be used as a raw material for preparing the silicon carbide single crystal, which saves the preparation cost; Compared with silicon carbide powder, the sublimation speed of silicon polycrystal is slow, and it is not easy to introduce impurities, which can reduce the generation of defective crystals; the seed crystal column is bonded to the crucible cover, and the single crystal of silicon carbide is grown from the seed crystal column, which can effectively avoid the crystal growth process. The generation of medium stress can effectively reduce defects such as dislocations and lattices. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113089098-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113293437-A |
| priorityDate | 2020-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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