| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate |
2015-09-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0c7639355d2fe1a5a21a9b76c97373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07d38277837556d07b38971cd52e4bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c |
| publicationDate |
2020-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112133630-A |
| titleOfInvention |
Method for processing object to be processed having mask |
| abstract |
The present invention relates to a method of processing an object to be processed having a mask. [ problem ] to form a silicon oxide film at a low temperature without using a dedicated film forming apparatus in order to adjust the opening width of a mask. [ solution ] in one embodiment, a method for forming a silicon oxide film by repeating a sequence including the steps of: (a) a first step: generating a plasma of a first gas including a silicon halide gas in a processing container of a plasma processing apparatus accommodating an object to be processed, to form a reaction precursor; (b) a second step: purging a space within the process vessel; (c) a third step: generating plasma of a second gas containing oxygen in the processing container to form a silicon oxide film; and (d) a fourth step: purging the space within the process vessel. |
| priorityDate |
2014-10-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |