http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112332064-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P11-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P11-00 |
| filingDate | 2020-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112332064-B |
| titleOfInvention | Method for manufacturing high-reliability high-performance thin film microwave attenuation sheet |
| abstract | The invention discloses a method for manufacturing a high-reliability high-performance thin film microwave attenuation sheet, which comprises the following steps of: the method comprises the steps of printing high-temperature silver paste on the back of a ceramic substrate by adopting a thick film printing process, printing the high-temperature silver paste on a pad on the front side of the ceramic substrate by adopting the thick film printing process, then putting the ceramic substrate into a sintering furnace for sintering, coating photoresist on the front side of the ceramic substrate, exposing and developing, then respectively sputtering a Ti/W metal layer and a Ni/Cr metal layer, removing the photoresist in a degumming solution, finally coating the photoresist, exposing and developing, then sputtering an electroplated layer in vacuum, oxidizing a TaN resistive layer by adopting high temperature to form an oxidized layer on the surface of the TaN resistive layer, finely adjusting the resistance, and protecting the resistance by. The invention reduces the process steps, greatly improves the precision of the attenuation circuit and ensures the quality of the product. |
| priorityDate | 2020-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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