http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112481701-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 |
| filingDate | 2020-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-112481701-B |
| titleOfInvention | Preparation method of high-quality silicon carbide single crystal and silicon carbide single crystal |
| abstract | The present application provides a method for producing a high-quality silicon carbide single crystal, the method at least including the steps of charging, heating, and growing a crystal, the charging step including: providing a crystal growth raw material into a thermal field; the crystal growth raw material comprises first silicon carbide powder and mixed powder containing second silicon carbide powder and carbon powder, and the mixed powder is located below the bottom of the first silicon carbide powder in a thermal field. The application provides a preparation method of carborundum single crystal, through the lower floor for the mixed powder that contains carbon powder and carborundum powder and the cloth mode that the upper strata is pure carborundum powder, make the silicon-carbon ratio increase at long brilliant earlier stage in-process, the preferential carbon powder material reaction with in the mixed powder of silicon atmosphere, effectively alleviate the erosion to graphite crucible wall, can also prevent at long brilliant later stage simultaneously that the carbon granule from transmitting to the growing surface, the carbon inclusion defect that the earlier stage and the later stage that have effectively reduced crystal growth produced. |
| priorityDate | 2020-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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