| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_257cb9ec5a3e8cc4abac869f4addc9b7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0083 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2019-07-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33a58cd7e97d41bb9d3a264460f4c29c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e69bd527eedafc2eb9497ebfb51f98e0 |
| publicationDate |
2021-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-112567503-A |
| titleOfInvention |
Semiconductor etching method |
| abstract |
A method of etching into one or more epitaxial layers of respective semiconductor materials in a Vertical Cavity Surface Emitting Laser (VCSEL) semiconductor structure, wherein the or each semiconductor material is a III-V semiconductor material, a III-N semiconductor material or a II-VI semiconductor material. The method includes placing a substrate having a semiconductor structure thereon on a support table in a plasma processing chamber, the semiconductor structure being on a surface of the semiconductor structure remote from the support tableA patterned mask is carried on the face. The method also comprises the following process steps: establishing a flow of an etching gas mixture through a plasma processing chamber and generating a plasma within the plasma processing chamber while applying a Radio Frequency (RF) bias to a support table; thereby exposing portions of the semiconductor structure not covered by the patterned mask to the etching gas mixture plasma to be etched to form at least one feature in the semiconductor structure; wherein more than 90% of the etching gas mixture consists of silicon tetrachloride (SiCl) 4 ) And nitrogen (N) 2 ) The composition of the mixture. |
| priorityDate |
2018-07-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |