http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113328338-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065 |
| filingDate | 2021-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-10-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-10-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113328338-B |
| titleOfInvention | Photonic crystal microcavity silicon-based laser and preparation method thereof |
| abstract | The invention provides a photonic crystal microcavity silicon-based laser and a preparation method thereof. The laser comprises: a silicon-based substrate; a III-V group submicron line, a chirped one-dimensional photonic crystal; wherein, the III-V group submicron lines are superimposed On silicon-based substrates, chirped one-dimensional photonic crystals are fabricated to form photonic crystal microcavities in III‑V submicron wires. The preparation method includes: depositing a silicon dioxide dielectric layer on a silicon base substrate, etching the silicon dioxide dielectric layer and part of the silicon base substrate to form at least one communication trench; epitaxially growing III-V in the at least one communication trench The group submicron lines are polished, and one of the III-V group submicron lines is retained and etched to prepare a chirped one-dimensional photonic crystal to form a photonic crystal microcavity. The invention introduces a photonic crystal microcavity, which can realize the low-noise and low-threshold single-mode electric injection lasing characteristics of the laser, and promote the miniaturization of the silicon-based laser. |
| priorityDate | 2021-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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