http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113417006-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6aa20438a1cfe9191c174a93c6edc157
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
filingDate 2021-06-22^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_498dda761e5ddfbf65cba62f9f28a551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_554876a47c2cb207c294b673d98a074b
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_884f80d2bcfb0d7841e92f2b113d7096
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publicationDate 2021-09-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-113417006-A
titleOfInvention A kind of preparation device and method for improving seed crystal quality
abstract The present application discloses a preparation device and method for improving the quality of seed crystals. The device includes: a processing chamber, wherein a crucible is arranged in the processing chamber, and the crucible is used to hold raw materials; and a heating unit is provided with At the periphery of the crucible, for melting the raw material into molten components and subliming to the seed crystal to repair or reconstruct the atomic steps of the seed crystal growth surface; the upper edge of the heating unit does not exceed The liquid level of the molten component; a loading unit, the loading unit is used for loading seed crystals so that the seed crystals are located above the liquid level of the molten component. The preparation device can repair the damaged steps on the seed crystal growth surface, or reconstruct new steps on the seed crystal growth surface, and can simply and efficiently control the step density of the seed crystal growth surface, that is, realize the information of the seed crystal growth surface. It can be repaired or regulated, laying the foundation for subsequent growth to obtain ultra-high-quality crystals.
priorityDate 2021-06-22^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6165874-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583146
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http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23942

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