| abstract |
Embodiments of the present disclosure generally relate to methods of processing substrates. The method includes exposing a substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a Radio Frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture)/(boron-containing gas mixture + hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hard mask film provides high modulus, etch selectivity and stress for high aspect ratio features (e.g., 10: 1 or above) and small size devices (e.g., 7nm node or below). |