| abstract |
The invention discloses a silicon-based beta-Ga with controllable size 2 O 3 Method for preparing nanowires, silicon-basedSize controllable beta-Ga 2 O 3 The preparation process of the nanowire comprises the following steps: firstly, depositing gold (Au) catalyst layers with different thicknesses on a single crystal Si (100) substrate, carrying out in-situ spheroidizing annealing on the catalyst layers to obtain Au nano-particles with different sizes, and then carrying out magnetron sputtering to grow beta-Ga 2 O 3 Nano-wire in-situ annealing to obtain beta-Ga with different sizes 2 O 3 A nanowire. The invention regulates and controls beta-Ga 2 O 3 The size of the nano-wire can obtain the beta-Ga with the advantages of less defects, high resistivity, uniformity, compactness and the like 2 O 3 A nanowire. beta-Ga of different sizes produced by the invention 2 O 3 The nano-wire shows excellent performance in solar blind ultraviolet detector application, can be applied to missile approach early warning systems, ultraviolet communication, ultraviolet imaging navigation and the like in the military field, and has wide application prospect in the aspects of automobile exhaust detection, flame detection, fingerprint detection and the like in the civil field. |