| abstract |
Embodiments of the present invention provide a semiconductor device capable of suppressing contact resistance and a method of manufacturing the same. The semiconductor device of the present embodiment includes a substrate and a transistor. The transistor has a source layer and a drain layer, a gate insulating film, a gate electrode, a contact plug, and a first epitaxial layer. The source layer and the drain layer are disposed on the surface region of the substrate and contain impurities. A gate insulating film is provided on the substrate between the source and drain layers. The gate electrode is provided on the gate insulating film. The contact plugs are provided so as to protrude below the surface of the substrate with respect to the source layer or the drain layer. The first epitaxial layer is provided between the contact plug and the source layer or the drain layer, and contains both impurities and carbon. |