http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114695706-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27a862b25ae5a5a49601c6c09c82b7a2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 |
| filingDate | 2020-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49cc60aec3aa499b07518a64d9d89cf3 |
| publicationDate | 2022-07-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-114695706-A |
| titleOfInvention | A kind of quantum dot light-emitting diode and preparation method thereof |
| abstract | The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a quantum dot light-emitting layer arranged between a cathode and an anode, and a hollow space arranged between the anode and the quantum dot light-emitting layer. A hole transport layer, an interface layer is arranged between the hole transport layer and the quantum dot light-emitting layer, the interface layer material is garnet, and the general structural formula of the garnet is Li 3 N 3 M 2 O 12 , where M is Te or W; N is Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu; the HOMO energy level of the interface layer is greater than that of the hole The HOMO energy level of the transport layer is smaller than the HOMO energy level of the quantum dot light-emitting layer. In the present invention, the interface layer can effectively reduce the hole injection barrier, improve the hole injection rate, and at the same time effectively prevent electron tunneling and holes from recombining in the non-quantum dot light-emitting region, thereby improving the light-emitting efficiency of the device. |
| priorityDate | 2020-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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