| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5a3af8c0eb98fa32c9867f1657fdd194 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K11-892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2022-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0436c2afe9f25171a9eef945d167f7f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6365061cde20021747acbb0017809256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_035bb4e124fdeef6dbffc30c94c916ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0aaf22384110fe6726e5788f13e6a060
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4df3e98f448c9f3ac3230c86db90d1bd |
| publicationDate |
2022-07-05^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114702948-A |
| titleOfInvention |
Infrared quantum dot layer and preparation method thereof, infrared photosensitive element and preparation method thereof |
| abstract |
The present disclosure relates to an infrared quantum dot layer and a preparation method thereof, an infrared photosensitive element and a preparation method thereof. The preparation method of the infrared quantum dot layer includes preparing preset quantum dots, a non-polar long-chain ligand solution, and a polar short-chain ligand solution and solid ligand liquid; wherein, the preset quantum dots are dissolved in the non-polar long-chain ligand solution; the non-polar long-chain ligand solution dissolved with the preset quantum dots is mixed with the polar short-chain ligand solution to make The quantum dots are transferred to polar short-chain ligands to form a preset solution; the preset solution is used to form a preset film layer; the solid ligand liquid is used to treat the preset film layer by the solid ligand method to passivate the surface of the preset film layer The defect states form an infrared quantum dot layer. Through the technical solution of the present disclosure, the mobility of carriers in the infrared quantum dot layer and the photoelectric response efficiency of the infrared photosensitive element are improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115588702-A |
| priorityDate |
2022-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |