| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49308e8718b2bc5be941bc5b7a1d2443 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2020-12-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1f0058c41613af765f3cce2181979f0 |
| publicationDate |
2022-08-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-114946092-A |
| titleOfInvention |
Vertical resonator type light-emitting element |
| abstract |
Provided is a vertical resonator type light emitting element with high luminous efficiency. The present invention is characterized by having: a substrate; a first multilayer thin film mirror formed on the substrate; a semiconductor structure layer comprising a first semiconductor layer of a first conductivity type formed on the first multilayer thin film mirror; a light-emitting layer on the first semiconductor layer and a second semiconductor layer of a second conductivity type opposite to the first conductivity type and formed on the light-emitting layer; an electrode layer formed on the upper surface of the semiconductor structure layer and on top an area of the surface in electrical contact with a second semiconductor layer of the semiconductor structure layer; and a second multilayer thin film mirror formed to cover an area on the electrode layer and forming a resonator with the first multilayer thin film mirror, The semiconductor structure layer has a recessed structure including one or more recesses penetrating the light-emitting layer from the upper surface in a region surrounding the one region. |
| priorityDate |
2020-01-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |