| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9ee47a6e43206052b2f8fe150a33a36 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate |
2017-11-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8a5ecfc4b50d3c5fb7713bde6d4d41f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8742b89b1cd027b2ea8357a375acde64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31824fc33c6f489199730efd01e1b606 |
| publicationDate |
2022-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-115241340-A |
| titleOfInvention |
Semiconductor device and semiconductor device package including the same |
| abstract |
The invention discloses a semiconductor device and a semiconductor device package including the semiconductor device. The device includes a light emitting structure including: a first semiconductor layer and a second semiconductor layer having aluminum; an active layer having aluminum and located between the first and second semiconductor layers; and an intensity range exhibited in the second semiconductor layer is between the first minimum intensity and the first maximum intensity of the secondary ions; the intensity exhibited in the first semiconductor layer includes the second minimum intensity of the secondary ions, which is different from the first minimum intensity; At a first preset distance from the surface of the layer, the second semiconductor layer exhibits a first intermediate intensity of secondary ions corresponding to a second minimum intensity, the first maximum intensity occurring at a second distance from the first preset distance At the preset distance; the ratio of the second preset distance to the first preset distance is in the range of 1:0.2 to 1:1. |
| priorityDate |
2016-11-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |