http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-207134369-U
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a767f4998e53684ec68f4fdfbb8e4de7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate | 2017-07-21^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0dcfd8f8d6739517765d0d73099bd25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2ed041137d4d380706e91add5ba94c5 |
| publicationDate | 2018-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-207134369-U |
| titleOfInvention | A kind of triangle drives entire formula cell type electrode-semiconductor detector |
| abstract | A kind of triangle drives entire formula cell type electrode-semiconductor detector, the triangle drives entire formula cell type electrode-semiconductor detector, by semiconductor substrate, and the trench electrode composition nested with central cylindrical electrode that semiconductor substrate etching forms, trench electrode is the rhombus column overlapped to form by two equilateral triangle bases, each corresponding two central cylindrical electrodes of trench electrode, two central cylindrical electrodes are arranged on the center of two equilateral triangles, trench electrode and central cylindrical electrode are hollow electrode, ion is carried out again after etched to diffuse to form, the triangle is opened in the trench electrode and central cylindrical electrode of entire formula cell type electrode-semiconductor detector top surface covered with contact electrode layer, top surface other semiconductor portions covering silicon dioxide insulating layer, bottom surface is provided with silicon dioxide liner bottom.The utility model deadband eliminating, etching technics be through etching technics, during work, particle can two-side incidence, reaction is sensitiveer, and detection efficient is higher. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107256905-A |
| priorityDate | 2017-07-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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