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filingDate 2000-05-12^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0645e1f3a45dd8de0207963d673428c6
publicationDate 2000-11-23^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-10023375-A1
titleOfInvention Base layer structure for spin valve sensors
abstract A two-layer base layer structure is used between a first read distance layer and a spin valve sensor in order to increase the magnetoresistive coefficient (dr / R). In a sensor with a lower spin valve, the two-layer base layer structure is between the first reading distance layer and an anchoring layer, and in a sensor with an upper spin valve, the two-layer base layer structure is between the first reading distance layer and the free layer. The solid layer is preferably made of iridium manganese (IrMn). The two-layer base layer structure comprises a first base layer made of a metal oxide and a second base layer made of a non-magnetic metal. A preferred embodiment is a first base layer made of nickel manganese oxide (NiMnO) and a second base layer made of copper (Cu).
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type http://data.epo.org/linked-data/def/patent/Publication

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