http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10036725-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2000-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16a33171a346ee33d29faa38a867e13d |
| publicationDate | 2002-02-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10036725-A1 |
| titleOfInvention | Method of forming an insulator with a low dielectric constant on a semiconductor substrate |
| abstract | The present invention relates to a method for producing an insulator on a semiconductor substrate which has a low dielectric constant. A first conductor track (2) and a second conductor track (3) are arranged on a semiconductor substrate (1). A conductive silicon (4) is formed between the first conductor track (2) and the second conductor track (3). The conductive silicon (4) is anodically etched in an electrolyte containing hydrofluoric acid, the conductive silicon (4) being converted into porous silicon (5). The porous silicon (5) is then oxidized to porous silicon oxide (6). The porous silicon oxide (6) with a dielectric constant between 1.1 and 4 has a lower dielectric constant than conventional silicon oxide with 4. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058086-B2 |
| priorityDate | 2000-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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