| abstract |
In a method for producing ferroelectric capacitors based on the stack principle for use in integrated semiconductor memory modules, the individual capacitor modules (10, 11) have an oxygen barrier (4a, 4b) between a lower capacitor electrode (5a, 5b) and an electrically conductive plug (1a, 1b). An unstructured adhesive layer (3), where it is not covered by the respective oxygen barrier (4a, 4b), is oxidized by the oxygen that is produced during the tempering process of the ferroelectric (6a, 6b) and forms insulating sections there, so that the lower ones Capacitor electrodes (5a, 5b) of the ferroelectric capacitors (10, 11) are electrically insulated from one another. This eliminates the structuring step for the adhesive layer (3) and this layer (3) can also be used for gettering oxygen and for inhibiting oxygen diffusion to the plug. |