http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-10114406-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate | 2001-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee98bf9bb57a66f69d44321d1450ade http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de0ea5bf025bf9062fe0633ddcca7aa8 |
| publicationDate | 2002-10-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-10114406-A1 |
| titleOfInvention | Process for the production of ferroelectric memory cells |
| abstract | The invention relates to a method for producing ferroelectric memory cells according to the stack principle, wherein between a lower capacitor electrode (6) of a storage capacitor and a conductive plug (1) formed underneath, which is used for electrically connecting this capacitor electrode (6) to a transistor electrode in or on a Selection transistor formed semiconductor wafer, an adhesive layer (2, 3) and an oxygen diffusion barrier (4, 5) formed over the adhesive layer and after the deposition of the ferroelectric are subjected to an RTP step in an oxygen atmosphere, the method being characterized by the following steps: DOLLAR A (A) Determination of the rate of oxidation of the adhesive layer (2, 3) and the diffusion coefficient (D¶Oxygen¶ (T)) of oxygen in the material of the adhesive layer (2, 3) as a function of the temperature (T); DOLLAR A (B) Determination of the diffusion coefficient (D¶Silicon¶ (T)) of silicon in the material of the adhesive layer (2, 3) depending on the temperature and DOLLAR A (C) calculation of an optimal temperature range for the RTP step the previously determined two diffusion coefficients (D¶s oxygen¶ (T) and D¶silicon¶ (T)) for a given layer thickness (d¶BARR¶) of the layer system consisting of adhesive layer (2, 3) and oxygen diffusion barrier, so that during the RTP The silicidation of the adhesive layer proceeds faster than its oxidation. |
| priorityDate | 2001-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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