http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004023425-B4

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filingDate 2004-05-12^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-08-24^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85757e0f0ec58a61f3b7db76b0ec380
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1db114dec665b48d711b19548e19736
publicationDate 2017-08-24^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102004023425-B4
titleOfInvention Method for detecting the Cu concentration of a silicon substrate
abstract A method of detecting a Cu concentration present in a silicon substrate by heating the silicon substrate at a temperature of 600 ° C or less to thereby quantitatively analyze Cu present on front and opposite surfaces of the heated substrate, characterized in that the substrate is boron at a Concentration of 3 × 10 18 atoms / cm 3 or more; four silicon substrates (20, 30, 40, 50) are produced; each of them is divided into quadrants (20a to 20d, 30a to 30d, 40a to 40d, 50a to 50d); from each silicon substrate (20, 30, 40, 50) a substrate quadrant (20a, 30d, 40b, 50c) is simultaneously placed on a hot plate (12) and for 1 to 12 hours at a temperature of 300 ° C up to 350 ° C excluding is heated.
priorityDate 2003-05-12^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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