http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004023425-B4
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2223-076 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N23-223 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-31 |
filingDate | 2004-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-08-24^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f85757e0f0ec58a61f3b7db76b0ec380 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1db114dec665b48d711b19548e19736 |
publicationDate | 2017-08-24^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-102004023425-B4 |
titleOfInvention | Method for detecting the Cu concentration of a silicon substrate |
abstract | A method of detecting a Cu concentration present in a silicon substrate by heating the silicon substrate at a temperature of 600 ° C or less to thereby quantitatively analyze Cu present on front and opposite surfaces of the heated substrate, characterized in that the substrate is boron at a Concentration of 3 × 10 18 atoms / cm 3 or more; four silicon substrates (20, 30, 40, 50) are produced; each of them is divided into quadrants (20a to 20d, 30a to 30d, 40a to 40d, 50a to 50d); from each silicon substrate (20, 30, 40, 50) a substrate quadrant (20a, 30d, 40b, 50c) is simultaneously placed on a hot plate (12) and for 1 to 12 hours at a temperature of 300 ° C up to 350 ° C excluding is heated. |
priorityDate | 2003-05-12^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
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