http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102004046697-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2004-09-24^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-06-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49192f36682f275f23fe9eac6cb3da3c |
| publicationDate | 2020-06-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102004046697-B4 |
| titleOfInvention | High-voltage-resistant semiconductor component with vertically conductive semiconductor body regions and a trench structure, and method for producing the same |
| abstract | High-voltage-resistant semiconductor component in the form of a MOS power transistor or IGBT power transistor, which has: vertically conductive, weakly doped semiconductor body regions (17) as drift path regions of a first conductivity type; channel regions (21) of a second conduction type arranged in the drift regions (17) and source regions of the first conduction type arranged in the channel regions (21); and a trench structure (5) in the region of an upper side (6) of the semiconductor component, which at least partially surrounds the vertically conductive semiconductor body regions (17) and which also has: Floor (7) and wall areas (8), a highly doped semiconductor material (11) of the same conductivity type as the lightly doped semiconductor body regions (17) and / or a metallically conductive material (12) in each case in the bottom regions (7), a dielectric material (9) with a relative dielectric constant which is higher than that of silicon, in each case adjacent to the highly doped semiconductor material (11) or the metallically conductive material (12), a highly conductive or metallic contact (15, 28) which adjoins the dielectric material (9), which forms a source electrode (S 1 ) of the MOS power transistor or an emitter electrode of the IGBT power transistor and which is located in the wall regions ( 8) adjacent to the channel areas (21) and the source areas. |
| priorityDate | 2004-09-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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