| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80e388d07cba4b8311e783e720f2432a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2007-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c16042292650b1df7bbab12763fd8eb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a294c8f336203945a32d9a18328a310
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3adb86e116c293d498016b40f6607f60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052fccba61abb79b2771fdf647c20dae |
| publicationDate |
2009-03-19^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102007044414-A1 |
| titleOfInvention |
Semiconductor device and method of making the same |
| abstract |
ThenThe invention relates to a semiconductor device (1) and a methodnfor the production of the same. The semiconductor device (1) has ancrystalline semiconductor bodyn(2) with a drift path structure (3). The drift route structuren(3) has drift zones (4) in a trench structure (5) with trench walls (6)nand charge compensation zones (7) of complementary conductivity type to adjacent onesnDrift zones (4). Between the drift zones (4) and the charge compensation zonesn(7) high-resistance intermediate zones (8) are arranged on the trench walls (6). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3608969-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868172-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3608966-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545545-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3608968-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3608967-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101989553-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031466-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861966-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3651202-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110828561-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3761371-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741638-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573742-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3748689-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580888-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014113214-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417732-B2 |
| priorityDate |
2007-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |