http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102008036062-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd5f3061b68bcbebb150a645605367f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate | 2008-08-04^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-11-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1cded8987d0bf47853d6b027d08ebd9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86f6bd100ba03aaf586d3b747b41b4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4325b3f1671a2b5fc5aeb0210c8b45f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c95aaeef94b9a3688e0e1e843adfa26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afe7dd595976301bd4faf9907d10147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2306876ef912e6947adaff83a0bcd10 |
| publicationDate | 2015-11-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102008036062-B4 |
| titleOfInvention | Organic field effect transistor |
| abstract | Organic field-effect transistor, in particular organic thin-film field-effect transistor, with: A gate electrode (6), a drain electrode (4) and a source electrode (3), A dielectric layer (5) formed in contact with the gate electrode (6), An active layer (2) of organic material which is in contact with the drain electrode (4) and the source electrode (3) and which is designed to be electrically undoped, A dopant material layer (1; 11) containing a dopant material which is an electrical dopant for the organic material of the active layer (2), and An interface region in which a surface contact between the active layer (2) and the doping material layer (1, 11) is formed, wherein a mobility for similar electric charge carriers, namely electrons or holes, in the doping material layer (1; 11) is at most half as large as in the active layer (2). |
| priorityDate | 2008-08-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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