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filingDate 2012-02-10^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dee9d75ac6135d01b1bfda10d87fb85
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publicationDate 2013-08-14^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-102012202067-A1
titleOfInvention Semiconductor devices with a steep phosphor profile in a germanium layer
abstract The invention relates to a semiconductor device, a method for limiting a dopant diffusion, in particular a phosphorus diffusion in germanium. According to the invention, a Si spike is used for this purpose.
priorityDate 2012-02-10^^<http://www.w3.org/2001/XMLSchema#date>
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