| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2015-12-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a5a086a96f70a911a4e7926d10a898d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2812618f3b97bb4fdf230c45f03bf57e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c42a9f846938b5e2255a6eae63d41939
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d909e356a28d754fec1bb7160325ddbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dee71b217f7d178cac2515cc1b34779
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337e5e3ca6f66d1917161bdaf4e1d3c1 |
| publicationDate |
2016-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102015121532-A1 |
| titleOfInvention |
Method for producing a silicon carbide component with a shielded gate |
| abstract |
There is formed a silicon carbide semiconductor substrate having a plurality of first doped regions laterally spaced apart and below a major surface and a second doped region extending from the major surface to a third doped region that is above the first doped regions. Fourth doped regions are formed extending from the main surface to the first doped regions. A gate trench is formed having a bottom disposed over a portion of one of the first doped regions. A high temperature step is performed on the substrate to reorient silicon carbide atoms along sidewalls of the trench and produce rounded corners in the gate trench. A surface layer that forms along the sidewalls of the gate trench during the high temperature step is removed from the substrate. |
| priorityDate |
2014-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |