| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37b8fbd17fa06b1235eb6103853d7364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6672798a85f8e8943edf85a93f9d75e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45b00afbe948bccc135124ebe8b1f9dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae1ab45fceb3d026840bba36b06c4b03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba683dd6867ce2bc8d3c84e3c368d704 |
| publicationDate |
2021-10-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102020120265-A1 |
| titleOfInvention |
Forming isolation regions for separating fins and gate stacks |
| abstract |
One method includes forming a semiconductor fin that protrudes higher than the tops of isolation regions. The isolation regions extend into a semiconductor substrate. A portion of the semiconductor fin is etched to form a trench that extends lower than bottoms of the isolation regions and extends into the semiconductor substrate. The method further comprises: filling the trench with a first dielectric material to form a first fin isolation region, recessing the first fin isolation region to form a first recess, and filling the first recess with a second dielectric material. The first dielectric material and the second dielectric material combine to form a second fin isolation region. |
| priorityDate |
2020-04-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |