http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102020122679-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6635a0116bafd2c08a0c99b78e132e99 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2020-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf951e88b1f10683b0637e33b421d0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_069493ee84a527e7c79213117f4ac871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a8c7404edcfbf0dad2ef51cbcd9b08 |
| publicationDate | 2022-03-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-102020122679-A1 |
| titleOfInvention | Process for depositing a two-dimensional layer |
| abstract | The invention relates to a method for depositing a two-dimensional layer on a substrate (5) in a process chamber (6) of a CVD reactor (1) by feeding one or more reactive gases into the process chamber, the method comprising a plurality of process steps that follow one another in terms of time, each characterized by a set of process parameters, which process parameters include at least a temperature, a total gas pressure in the process chamber (6), the type of reactive gas and a partial pressure of the reactive gas in the process chamber (6) or a mass flow of the reactive gas are in the process chamber (6), and the process steps (A, B, C) which follow one another in terms of time differ by a difference in at least one of the process parameters. In order to improve the layer quality of the deposited layer, the process parameters are selected such that in a first process step (A) spaced crystalline zones (10) are deposited on the surface of the substrate (5), in a second process step (A) following the first Process step (B) the number and/or the total area of the crystalline zones (10) is reduced and in a third process step (C) following the second process step (B) the areas of the crystalline zones (10) are increased. |
| priorityDate | 2020-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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