| abstract |
A wafer processing method includes a polyester film providing step of positioning a wafer in an inner opening of a ring frame and providing a polyester film on a back side or a front side of the wafer and a back side of the ring frame, a joining step of heating the polyester film while applying pressure to the polyester film, to thereby connect the wafer and the ring frame through the polyester film by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual component chips, and a receiving step of applying an ultrasonic wave the polyester film in each of the multiple separate areas corresponding to a respective component chip, pushing each component chip up through the polyester film, and then picking up each component chip from the polyester film. |